Проверенные модули памяти
8136301
8136302
Micron R-die
Manufacturing Description
Module Manufacturer: Crucial Technology Module Part Number: CT8G4DFRA32A.C8FR Module Series: Desktop Memory DRAM Manufacturer: Micron Technology DRAM Components: C9BMQ (CT40A1G8SA-062E:R) Component Design ID: Z41C DRAM Die Revision / Process Node: R / 14 nm Module Manufacturing Date: Week 11, 2022 Manufacturing Date Decoded: March 14-18, 2022 Module Manufacturing Location: Boise, USA (SIG) Module Serial Number: E6597BFEh Manufacturing Identification Number (Lot Number): 422331148 Module PCB Revision: 00h
Physical & Logical Attributes
Fundamental Memory Class: DDR4 SDRAM Module Speed Grade: DDR4-3200AA Base Module Type: UDIMM (133,35 mm) Module Capacity: 8 GB Reference Raw Card: A2 (8 layers) JEDEC Raw Card Designer: SK hynix Module Nominal Height: 31 < H <= 32 mm Module Thickness Maximum, Front: 1 < T <= 2 mm Module Thickness Maximum, Back: T <= 1 mm Number of DIMM Ranks: 1 Address Mapping from Edge Connector to DRAM: Standard DRAM Device Package: Standard Monolithic DRAM Device Package Type: 78-ball FBGA DRAM Device Die Count: Single die Signal Loading: Not specified DRAM I/O Width: 8 bits Column Addressing: 10 bits Row Addressing: 16 bits Bank Addressing: 2 bits (4 banks) Bank Group Addressing: 2 bits (4 groups) Programmed DRAM Density: 8 Gb Calculated DRAM Density: 8 Gb Number of DRAM components: 8 DRAM Page Size: 1 KB Primary Memory Bus Width: 64 bits Memory Bus Width Extension: 0 bits DRAM Post Package Repair: Supported Soft Post Package Repair: Supported
DRAM Timing Parameters
Fine Timebase: 0,001 ns Medium Timebase: 0,125 ns CAS Latencies Supported: 10T, 11T, 12T, 13T,
14T, 15T, 16T, 17T,
18T, 19T, 20T, 21T, 22T, 23T, 24T, 25T, 26T, 28T Minimum Clock Cycle Time (tCK min): 0,625 ns (1600,00 MHz) Maximum Clock Cycle Time (tCK max): 1,600 ns (625,00 MHz) CAS# Latency Time (tAA min): 13,750 ns RAS# to CAS# Delay Time (tRCD min): 13,750 ns Row Precharge Delay Time (tRP min): 13,750 ns Active to Precharge Delay Time (tRAS min): 32,000 ns Act to Act/Refresh Delay Time (tRC min): 45,750 ns Normal Refresh Recovery Delay Time (tRFC1 min): 350,000 ns 2x mode Refresh Recovery Delay Time (tRFC2 min): 260,000 ns 4x mode Refresh Recovery Delay Time (tRFC4 min): 160,000 ns Short Row Active to Row Active Delay (tRRD_S min): 2,500 ns Long Row Active to Row Active Delay (tRRD_L min): 4,900 ns Write Recovery Time (tWR min): 15,000 ns Short Write to Read Command Delay (tWTR_S min): 2,500 ns Long Write to Read Command Delay (tWTR_L min): 7,500 ns Long CAS to CAS Delay Time (tCCD_L min): 5,000 ns Four Active Windows Delay (tFAW min): 21,000 ns Maximum Active Window (tMAW): 8192*tREFI Maximum Activate Count (MAC): Unlimited MAC DRAM VDD 1,20 V operable/endurant: Yes/Yes Supply Voltage (VDD), Min / Typical / Max: 1,16V / 1,20V / 1,26V Activation Supply Voltage (VPP), Min / Typical / Max: 2,41V / 2,50V / 2,75V Termination Voltage (VTT), Min / Typical / Max: 0,565V / 0,605V / 0,640V
Thermal Parameters
Module Thermal Sensor: Not Incorporated
SPD Protocol
SPD Revision: 1.1 SPD Bytes Total: 512 SPD Bytes Used: 384 SPD Checksum (Bytes 00h-7Dh): 8479h (OK) SPD Checksum (Bytes 80h-FDh): 53D8h (OK)
Part number details
JEDEC DIMM Label: 8GB 1Rx8 PC4-3200AA-UA2-11 Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW 1600 MHz 28 22 22 52 74 4 8 24 4 12 34 1600 MHz 26 22 22 52 74 4 8 24 4 12 34 1600 MHz 25 22 22 52 74 4 8 24 4 12 34 1600 MHz 24 22 22 52 74 4 8 24 4 12 34 1600 MHz 23 22 22 52 74 4 8 24 4 12 34 1600 MHz 22 22 22 52 74 4 8 24 4 12 34 1466 MHz 21 21 21 47 68 4 8 22 4 11 31 1333 MHz 20 19 19 43 61 4 7 20 4 10 28 1333 MHz 19 19 19 43 61 4 7 20 4 10 28 1200 MHz 18 17 17 39 55 3 6 18 3 9 26 1200 MHz 17 17 17 39 55 3 6 18 3 9 26 1067 MHz 16 15 15 35 49 3 6 16 3 8 23 1067 MHz 15 15 15 35 49 3 6 16 3 8 23 933 MHz 14 13 13 30 43 3 5 14 3 7 20 933 MHz 13 13 13 30 43 3 5 14 3 7 20 800 MHz 12 11 11 26 37 2 4 12 2 6 17 800 MHz 11 11 11 26 37 2 4 12 2 6 17 667 MHz 10 10 10 22 31 2 4 10 2 5 14