Атрибуты продукта
- Description: N-Channel MOSFET Features: Enhancement Mode 100V DS RDS(on) < 6.8mΩ ID = 100A Low Gate Charge Fast Switching High Reliability Output Capacitance Coss < 250pF Applications: UPS/Inverter Motor Control Solar Power DC-DC/DC-AC Converters Power Supply Server/Telecom Equipment (For reference only)
Features
● RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A
● Low gate charge ( Typ. 238nC)
● Low Crss ( Typ. 64pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
● RoHS Comp
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction